Low-temperature ballistic transport in nanoscale epitaxial graphene cross junctions

TL;DR

This paper demonstrates inertial-ballistic transport in nanoscale epitaxial graphene cross junctions at low temperatures, evidenced by negative bend resistance that diminishes above 80 K, highlighting potential for high-speed electronic applications.

Contribution

It provides experimental evidence of ballistic transport in epitaxial graphene cross junctions and characterizes its temperature dependence.

Findings

Negative bend resistance observed at 4.2 K

Ballistic transport diminishes above 80 K

Potential for high-speed electronics in graphene devices

Abstract

We report on the observation of inertial-ballistic transport in nanoscale cross junctions fabricated from epitaxial graphene grown on SiC(0001). Ballistic transport is indicated by a negative bend resistance of R12,43 ~ 170 ohm which is measured in a non-local, four-terminal configuration at 4.2 K and which vanishes as the temperature is increased above 80 K.