Magnetic resonance spectroscopy of single centers in silicon quantum wells
Nikolay T. Bagraev, Leonid E. Klyachkin, Andrey A. Kudryavtsev, Anna, M. Malyarenko

TL;DR
This paper introduces a novel ODMR technique for detecting single point defects in silicon quantum wells embedded in microcavities, utilizing excitonic normal-mode coupling without external cavities or high-frequency sources.
Contribution
The work presents a new ODMR method that enables detection of single defects in silicon quantum wells using excitonic NMC without external cavities or RF sources.
Findings
Successful detection of single point defects in silicon quantum wells
Implementation of ODMR without external cavity or RF source
Potential for advanced quantum defect characterization
Abstract
We present the new optically-detected magnetic resonance (ODMR) technique which reveals single point defects in silicon quantum wells embedded in microcavities within frameworks of the excitonic normal-mode coupling (NMC) without the external cavity and the hf source.
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