EDEPR of impurity centers embedded in silicon microcavities

TL;DR

This paper introduces a novel electrically-detected EPR technique that detects impurity centers in silicon microcavities solely through magnetoresistance measurements, eliminating the need for external cavities or high-frequency sources.

Contribution

The paper presents the first implementation of EDEPR that identifies impurity centers in silicon without external cavity or hf source, using only magnetoresistance measurements.

Findings

Detection of shallow and deep impurity centers in silicon microcavities.

Elimination of external cavity and hf source in EPR measurements.

Successful identification of impurity centers via magnetoresistance.

Abstract

We present the first findings of the new electrically-detected EPR (EDEPR) technique which reveal different shallow and deep centers without using the external cavity as well as the hf source and recorder, with measuring the only magnetoresistance of the Si-QW confined by the superconductor delta-barriers.