Modeling electrolytically top gated graphene

TL;DR

This paper models how electrolytic top gating affects graphene doping, highlighting the roles of salt concentration and quantum capacitance, with implications for sensor and electronic device design.

Contribution

It introduces a modified Poisson-Boltzmann model to analyze electrolyte-graphene interactions, emphasizing quantum capacitance effects in doping behavior.

Findings

Graphene doping levels are highly sensitive to salt concentration.

Quantum capacitance significantly influences doping in electrolyte environments.

The model provides insights into electrolyte-graphene interface phenomena.

Abstract

We investigate doping of a single-layer graphene in the presence of electrolytic top gating. The interfacial phenomena is modeled using a modified Poisson-Boltzmann equation for an aqueous solution of simple salt. We demonstrate both the sensitivity of graphene's doping levels to the salt concentration and the importance of quantum capacitance that arises due to the smallness of the Debye screening length in the electrolyte.