Graphene on Insulating Oxide Substrates: Role of Surface Dangling States
Priyamvada Jadaun, Sanjay K. Banerjee, Bhagawan Sahu

TL;DR
This study investigates how different insulating oxide substrates and their surface dangling states affect the electronic properties of monolayer and bilayer graphene, revealing the importance of surface passivation and atomic relaxations.
Contribution
It provides a detailed first-principles analysis of substrate surface effects on graphene's band structure, highlighting the roles of dangling states and surface relaxations.
Findings
Si-terminated quartz retains graphene's linear bands with surface relaxation.
Surface dangling states influence the distortion of graphene's electronic spectrum.
Graphene on substrates exhibits ripples similar to suspended graphene, but weaker.
Abstract
We study the effect of insulating oxide substrates on the energy band structure of monolayer and bilayer graphene using a first principles density functional based electronic structure method and a local exchange correlation approximation. We consider two crystalline substrates, SiO2 (or alpha-quartz) and Al2O3 (alpha-alumina or sapphire), each with two surface terminations. We focus on the role of substrate surface dangling states and their passivation in perturbing the linear energy spectrum of graphene. On non-passivated surface terminations, with the relaxation of top surface layers, only Si-terminated quartz retains the linear band structure of graphene due to relatively large equilibrium separation from the graphene layer whereas the other three surface terminations considerably distort it. However, without relaxations of the top surface layer atoms, linear bands appear in the…
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Taxonomy
TopicsGraphene research and applications · Surface and Thin Film Phenomena · Quantum and electron transport phenomena
