Technique for the Dry Transfer of Epitaxial Graphene onto Arbitrary Substrates

TL;DR

This paper presents a dry transfer technique for epitaxial graphene onto various substrates, enabling its use in flexible electronics and transparent contacts, with analysis of its impact on electrical properties.

Contribution

A novel dry transfer method for epitaxial graphene onto diverse substrates using thermal release tape, improving integration in flexible and optical devices.

Findings

Successful transfer onto SiO2, GaN, Al2O3

Preservation of electrical properties post-transfer

Potential applications in flexible electronics

Abstract

In order to make graphene technologically viable, the transfer of graphene films to substrates appropriate for specific applications is required. We demonstrate the dry transfer of epitaxial graphene (EG) from the C-face of 4H-SiC onto SiO2, GaN and Al2O3 substrates using a thermal release tape. We further report on the impact of this process on the electrical properties of the EG films. This process enables EG films to be used in flexible electronic devices or as optically transparent contacts.