Dangling-bond charge qubit on a silicon surface

TL;DR

This paper proposes a silicon surface dangling-bond pair as a highly coherent charge qubit with an extremely high tunneling rate, potentially overcoming decoherence issues in silicon-based quantum computing.

Contribution

It introduces a novel dangling-bond charge qubit with a tunneling rate of 10^14 1/s, demonstrating its potential for robust quantum computing applications.

Findings

High tunneling rate (~10^14 1/s) exceeds decoherence rates

Dangling bonds form promising charge qubits on silicon surfaces

First-order analysis shows potential for quantum computing devices

Abstract

Two closely spaced dangling bonds positioned on a silicon surface and sharing an excess electron are revealed to be a strong candidate for a charge qubit. Based on our study of the coherent dynamics of this qubit, its extremely high tunneling rate ~ 10^14 1/s greatly exceeds the expected decoherence rates for a silicon-based system, thereby overcoming a critical obstacle of charge qubit quantum computing. We investigate possible configurations of dangling bond qubits for quantum computing devices. A first-order analysis of coherent dynamics of dangling bonds shows promise in this respect.