Tuning of electron transport through a moebius strip: shot noise

TL;DR

This paper investigates electron transport and shot noise in a moebius strip connected to electrodes, revealing how transverse hopping and coupling influence transport properties and current fluctuations, with implications for electronic device design.

Contribution

It introduces a parametric tight-binding model to analyze electron transport and shot noise in a moebius strip, highlighting the effects of transverse hopping and coupling strength.

Findings

Transport properties are significantly affected by transverse hopping.

Current fluctuations characterized by Fano factor provide insights into electron correlation.

Results inform the design of more efficient electronic devices.

Abstract

We explore electron transport through a moebius strip attached to two metallic electrodes by the use of Green's function technique. A parametric approach is used based on the tight-binding model to characterize the electron transport through such a bridge system and it is observed that the transport properties are significantly affected by (a) the transverse hopping strength between the two channels and (b) the strip-to-electrode coupling strength. In this context we also describe the noise power of the current fluctuations that provides a key information about the electron correlation which is obtained by calculating the Fano factor ($F$). The knowledge of this current fluctuations gives important ideas for fabrication of efficient electronic devices.