Graphite based Schottky diodes formed on Si, GaAs and 4H-SiC substrates

TL;DR

This paper reports the fabrication and characterization of graphite-based Schottky diodes on Si, GaAs, and 4H-SiC substrates, demonstrating thermionic emission behavior and barrier heights consistent with Schottky-Mott theory.

Contribution

It introduces a novel approach to forming Schottky diodes using graphite on various semiconductor substrates, highlighting their thermionic emission characteristics.

Findings

Barrier heights follow Schottky-Mott relation

Diodes exhibit thermionic emission behavior

Capacitance-voltage measurements confirm barrier heights

Abstract

We demonstrate the formation of semimetal graphite/semiconductor Schottky barriers where the semiconductor is either silicon (Si), gallium arsenide (GaAs) or 4H-silicon carbide (4H-SiC). Near room temperature, the forward-bias diode characteristics are well described by thermionic emission, and the extracted barrier heights, which are confirmed by capacitance voltage measurements, roughly follow the Schottky-Mott relation. Since the outermost layer of the graphite electrode is a single graphene sheet, we expect that graphene/semiconductor barriers will manifest similar behavior.