Non-Linear Temperature Dependence in Graphene Nanoribbon Tunneling Transistors

TL;DR

This paper demonstrates that the subthreshold tunneling current in graphene nanoribbon transistors exhibits significant, non-linear temperature dependence, challenging previous assumptions of temperature independence, with implications for understanding tunneling phenomena.

Contribution

It reveals the non-linear temperature dependence of tunneling current in GNR TFETs and proposes a general behavior applicable to all band-to-band tunneling transistors.

Findings

Temperature dependence varies with doping and electric field.

Non-linearity provides insights into tunneling mechanisms.

Predicted to be a universal behavior across tunneling transistors.

Abstract

It is usually assumed that tunneling current is fairly independent of temperature. By performing an atomistic transport simulation, we show, to the contrary, that the subthreshold tunneling current in a graphene nanoribbon (GNR) band-to-band tunneling transistor (TFET) should show significant and non-linear temperature dependence. Furthermore, the nature of this non-linearity changes as a function of source/drain doping and vertical electric field, indicating that such non-linearity, if properly understood, may provide important insights into the tunneling phenomena. Finally, by developing a pseudo-analytical method, we predict that such temperature dependence is not unique to GNR but should rather be a general behavior for any band-to-band tunneling transistor independent of the channel material.