Extraordinary Transmission in the UV Range from Sub-wavelength Slits on Semiconductors
M. A. Vincenti, D. de Ceglia, N. Akozbek, M. Buncick, M. J. Bloemer,, M. Scalora

TL;DR
This paper demonstrates that sub-wavelength slits on semiconductors can achieve extraordinary UV transmission due to surface plasmon waves, with potential applications in high-resolution lithography and optical storage.
Contribution
It reveals that semiconductors like GaAs and GaP can support surface plasmon waves in the UV range, enabling extraordinary transmission unlike metals.
Findings
Surface plasmon waves enable extraordinary UV transmission.
Semiconductors exhibit metal-like responses in the UV range.
Potential applications in lithography and optical storage.
Abstract
In this paper we describe a way to achieve the extraordinary transmission regime from sub-wavelength slits carved on semiconductor substrates. Unlike metals, the dielectric permittivity of typical semiconductors like GaAs or GaP is negative beginning in the extreme UV range (lambda <= 270nm). We show that the metal-like response of bulk semiconductors exhibits surface plasmon waves that lead to extraordinary transmission in the UV and soft X-ray ranges. The importance of realistic material response versus perfect conductors is also discussed. These findings may be important in high resolution photo-lithography, near field optical devices and ultra high density optical storage.
Peer Reviews
No public reviews on file for this paper yet. If you reviewed it on a platform where reviews are public (OpenReview, ICLR, NeurIPS, ICML), you can paste yours below so the community can read it here.
Videos
No videos yet. Explain this paper in a talk, walkthrough, or lecture? Add one.
