Selective coherent x-ray diffractive imaging of displacement fields in (Ga,Mn)As/GaAs periodical wires

TL;DR

This paper extends coherent x-ray diffractive imaging to high-resolution strain analysis in nanostructured devices, demonstrating its effectiveness in reconstructing strain distributions in (Ga,Mn)As/GaAs nanowires.

Contribution

It introduces a method to separate diffraction signals in reciprocal space for independent reconstruction of device parts, enabling detailed strain mapping.

Findings

Successful high-resolution strain imaging in nanowires

Effective separation of diffraction signals for component-specific analysis

Potential for detailed strain mapping in complex nanostructures

Abstract

Coherent x-ray diffractive imaging is extended to high resolution strain analysis in crystalline nanostructured devices. The application potential is demonstrated by determining the strain distribution in (Ga,Mn)As/GaAs nanowires. By separating diffraction signals in reciprocal spaces, individual parts of the device could be reconstructed independently by our inversion procedure. We demonstrate the method to be effective for material specific reconstruction of strain distribution in highly integrated devices.