Analytical model of 1D Carbon-based Schottky-Barrier Transistors

TL;DR

This paper introduces an analytical model for 1D carbon-based Schottky-Barrier transistors that accounts for both contact barriers and far-from-equilibrium transport, enabling better understanding of their interplay.

Contribution

The model uniquely combines Schottky barrier effects with dissipative FFE transport using the Buttiker probe approach, bridging a gap in existing transistor models.

Findings

Model captures transition between SB-limited and dissipation-limited transport.

Allows analysis of Schottky barrier influence on ambipolar FFE transport.

Provides insights into transport regimes in 1D carbon-based transistors.

Abstract

Nanotransistors typically operate in far-from-equilibrium (FFE) conditions, that cannot be described neither by drift-diffusion, nor by purely ballistic models. In carbonbased nanotransistors, source and drain contacts are often characterized by the formation of Schottky Barriers (SBs), with strong influence on transport. Here we present a model for onedimensional field-effect transistors (FETs), taking into account on equal footing both SB contacts and FFE transport regime. Intermediate transport is introduced within the Buttiker probe approach to dissipative transport, in which a non-ballistic transistor is seen as a suitable series of individually ballistic channels. Our model permits the study of the interplay of SBs and ambipolar FFE transport, and in particular of the transition between SB-limited and dissipation-limited transport.