Facile fabrication of suspended as-grown carbon nanotube devices

TL;DR

This paper presents a simple, scalable method for fabricating pristine suspended carbon nanotube FETs that exhibit improved electrical properties and reproducibility without chemical processing.

Contribution

The authors introduce a novel fabrication technique for suspended CNT-FETs that preserves pristine nanotubes and enhances device performance and reproducibility.

Findings

Suspended CNT-FETs show ambipolar transport with negligible hysteresis.

The Hooges constant is significantly lower in suspended CNT-FETs compared to control devices.

The technique allows control over nanotube density and multiple device fabrication on the same electrodes.

Abstract

A simple scalable scheme is reported for fabricating suspended carbon nanotube field effect transistors (CNT-FETs) without exposing pristine as-grown carbon nanotubes to subsequent chemical processing. Versatility and ease of the technique is demonstrated by controlling the density of suspended nanotubes and reproducing devices multiple times on the same electrode set. Suspending the carbon nanotubes results in ambipolar transport behavior with negligible hysteresis. The Hooges constant of the suspended CNT-FETs (2.6 x 10-3) is about 20 times lower than for control CNT-FETs on SiO2 (5.6 x 10-2).