Spin relaxation of hot electrons in the Gamma-valley of zinc-blende semiconductors

TL;DR

This paper introduces a method to calculate how hot electrons lose their spin polarization during energy relaxation in zinc-blende semiconductors, aligning well with experimental data and aiding in spin injection studies.

Contribution

The paper presents a novel technique for modeling spin relaxation of hot electrons during thermalization in the Gamma-valley of zinc-blende semiconductors.

Findings

Model matches recent experimental data

Applicable for checking spin boundary conditions

Useful for spin injection analysis

Abstract

We present a technique to calculate the spin relaxation of hot electrons during their energy thermalization in the Gamma-valley of zinc-blende semiconductors. The results of this model match recent experimental data and they can be used to check the applicability of spin related boundary conditions across a semiconductor/ferromagnet junction in reverse bias conditions (spin injection).