AB Percolation in Semiconductor Alloys
Rohit Garg, Kailash C. Rustagi

TL;DR
This paper investigates the unique formation of two percolating AB clusters at the threshold in semiconductor alloys, revealing new structural and physical insights into their properties.
Contribution
It introduces the phenomenon of dual percolating clusters in AB semiconductor alloys at the percolation threshold, a departure from traditional single-cluster percolation models.
Findings
Two AB clusters form simultaneously at the percolation threshold.
The structure and physical properties of these clusters are characterized.
Implications for the physical behavior of semiconductor mixed crystals are discussed.
Abstract
We show that, at the percolation threshold, two percolating AB clusters form in the diamond structure simultaneously instead of the usual one in the common site percolation problems. The structure of these two clusters and the related physical properties of semiconductor mixed crystals are discussed.
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Taxonomy
TopicsSurface and Thin Film Phenomena · Advanced Materials Characterization Techniques · Copper Interconnects and Reliability
