Half integer quantum Hall effect in high mobility single layer epitaxial graphene

TL;DR

This paper demonstrates the quantum Hall effect with a Berry's phase of π in high-mobility single-layer epitaxial graphene grown on silicon carbide, showing its potential for graphene electronics.

Contribution

It reports the observation of the quantum Hall effect in epitaxial graphene with high mobility, comparable to exfoliated graphene, highlighting its suitability for electronic applications.

Findings

Quantum Hall effect with Berry's phase of π observed

Mobility of ~20,000 cm²/V·s at 4 K achieved

Epitaxial graphene shows promise for electronics

Abstract

The quantum Hall effect, with a Berry's phase of $\pi$ is demonstrated here on a single graphene layer grown on the C-face of 4H silicon carbide. The mobility is $\sim$ 20,000 cm$^2$/V$\cdot$s at 4 K and ~15,000 cm$^2$/V$\cdot$s at 300 K despite contamination and substrate steps. This is comparable to the best exfoliated graphene flakes on SiO$_2$ and an order of magnitude larger than Si-face epitaxial graphene monolayers. These and other properties indicate that C-face epitaxial graphene is a viable platform for graphene-based electronics.