Anomalous Corrections to Hall Resistivity of Spin-Polarized Two-Dimensional Holes in a GaAs/AlGaAs Heterostructure

TL;DR

This paper investigates the nonlinear and negative corrections to Hall resistivity in spin-polarized two-dimensional holes in a GaAs/AlGaAs heterostructure, revealing anomalous Hall effects linked to spin polarization.

Contribution

It demonstrates the presence of anomalous Hall effects in a nonmagnetic 2D hole system under strong magnetic fields, highlighting the role of spin polarization.

Findings

Hall resistivity shows nonlinear increase with magnetic field.

Negative corrections to Hall resistivity grow with perpendicular magnetization.

Anomalous corrections depend non-monotonically on magnetic field.

Abstract

Hall effect of two-dimensional holes that are spin-polarized by a strong parallel magnetic field was explored with a small tilt angle. The Hall resistivity increases nonlinearly with the magnetic field and exhibits negative corrections. The anomalous negative corrections increase with the perpendicular magnetization of the two-dimensional hole system. We attribute this to the anomalous Hall effect of spin-polarized carriers in a nonmagnetic system. The anomalous corrections to the conductivity exhibit non-monotonic dependence on the magnetic field.