Conductance asymmetry of a slot gate Si-MOSFET in a strong parallel magnetic field

TL;DR

This study investigates conductance asymmetry in a Si-MOSFET with a slot gate under strong parallel magnetic fields, revealing that conductance depends on current direction due to spin accumulation or depletion effects.

Contribution

It introduces a novel Si-MOSFET setup with a slot gate to explore conductance asymmetry caused by magnetic fields, highlighting the role of spin dynamics.

Findings

Conductance asymmetry increases with magnetic field strength.

Asymmetry depends on the direction of the applied DC current.

Results suggest spin accumulation or depletion near the slot influences conductance.

Abstract

We report measurements on a Si-MOSFET sample with a slot in the upper gate, allowing for different electron densities n_{1,2} across the slot. The dynamic longitudinal resistance was measured by the standard lock-in technique, while maintaining a large DC current through the source-drain channel. We find that the conductance of the sample in a strong parallel magnetic field is asymmetric with respect to the DC current direction. This asymmetry increases with magnetic field. The results are interpreted in terms of electron spin accumulation or depletion near the slot.