Quantum Resistance Standard Based on Epitaxial Graphene

TL;DR

This paper presents a highly precise quantum Hall resistance standard using large-area epitaxial graphene, achieving unprecedented accuracy at low temperatures and maintaining quantization at higher temperatures, promising for practical metrology.

Contribution

It demonstrates a scalable, high-precision quantum resistance standard based on epitaxial graphene with accuracy comparable to semiconductor standards, operable at higher temperatures.

Findings

Achieved resistance accuracy of a few parts in a billion at 300 mK.

Maintained quantization at 4.2 K, simplifying practical use.

Used scalable silicon carbide technology for high-quality graphene.

Abstract

We report development of a quantum Hall resistance standard accurate to a few parts in a billion at 300 mK and based on large area epitaxial graphene. The remarkable precision constitutes an improvement of four orders of magnitude over the best results obtained in exfoliated graphene and is similar to the accuracy achieved in well-established semiconductor standards. Unlike the traditional resistance standards the novel graphene device is still accurately quantized at 4.2 K, vastly simplifying practical metrology. This breakthrough was made possible by exceptional graphene quality achieved with scalable silicon carbide technology on a wafer scale and shows great promise for future large scale applications in electronics.