SiC Graphene Suitable For Quantum Hall Resistance Metrology

TL;DR

This paper reports the first observation of the quantum Hall effect in epitaxial graphene on silicon carbide, demonstrating its potential for quantum resistance metrology and scalable electronics.

Contribution

It provides the first experimental evidence of the quantum Hall effect in epitaxial graphene on SiC, confirming its suitability for high-precision metrology and scalable device fabrication.

Findings

Quantum Hall effect observed in epitaxial graphene

Consistent results across multiple devices on a large wafer

Potential for high-temperature quantum resistance standards

Abstract

We report the first observation of the quantum Hall effect in epitaxial graphene. The result described in the submitted manuscript fills the yawning gap in the understanding of the electronic properties of this truly remarkable material and demonstrate suitability of the silicon carbide technology for manufactiring large area high quality graphene. Having found the quantum Hall effect in several devices produced on distant parts of a single large-area wafer, we can confirm that material synthesized on the Si-terminated face of SiC promises a suitable platform for the implementations of quantum resistance metrology at elevated temperatures and, in the longer term, opens bright prospects for scalable electronics based on graphene.