Epitaxial growth and magnetoelectric relaxor behavior in multiferroic 0.8Pb(Fe1/2Nb1/2)O3-0.2Pb(Mg1/2W1/2)O3 thin films
Wei Peng (1), N. Lem\'ee (1), J.-L. Dellis (1), V. V. Shvartsman (2),, P. Borisov (2), W. Kleemann (2), Z. Trontelj (3), J. Holc (4), M. Kosec (4),, R. Blinc (4), M. G. Karkut (1) ((1)LPMC, Universit\'e de Picardie Jules, Verne, France (2) Angewandte Physik

TL;DR
This study reports on the epitaxial growth and magnetoelectric relaxor behavior of a multiferroic thin film, revealing relaxor-like dielectric and magnetic properties with weak ferromagnetism persisting up to room temperature.
Contribution
It demonstrates the successful epitaxial growth of a multiferroic thin film with relaxor behavior and characterizes its magnetic and dielectric properties.
Findings
Epitaxial single-phase films achieved at specific growth conditions.
Relaxor-like dielectric and magnetic susceptibility dispersion observed.
Weak ferromagnetism persists up to 300 K.
Abstract
We present electric and magnetic properties of 0.8Pb(Fe1/2Nb1/2)O3-0.2Pb(Mg1/2W1/2)O3 films epitaxially grown on (001) SrTiO3 substrates using pulsed laser deposition. A narrow deposition window around 710 oC and 0.2 mbar has been identified to achieve epitaxial single-phase thin films. A typical Vogel-Fulcher relaxor-like dielectric and magnetic susceptibility dispersion is observed, suggesting magnetoelectric relaxor behavior in these films similar to the bulk. We determine a magnetic cluster freezing temperature of 36 K, while observing weak ferromagnetism via magnetic hysteresis loops up to 300 K.
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