Electron Scattering and Hybrid Phonons in Low Dimensional Laser Structures made with GaAs/AlxGa1-xAs

TL;DR

This paper models hybrid phonon modes in GaAs/AlxGa1-xAs heterostructures and examines their role in electron capture, revealing how aluminium concentration influences LED performance.

Contribution

It provides a theoretical and numerical analysis of hybrid phonons and their interaction with electrons in low-dimensional GaAs/AlxGa1-xAs structures, aligning with dielectric continuum model predictions.

Findings

Hybrid phonon modes are accurately modeled in GaAs/AlxGa1-xAs structures.

Electron capture rates via hybrid phonons match dielectric continuum model predictions.

Aluminium concentration significantly affects electron capture in LEDs.

Abstract

We theoretically and numerically present the hybrid phonon modes for the double heterostructure GaAs/AlxGa1-xAs and their interactions with electrons. More specifically, we have calculated the electron capture within a symmetric quantum well via the emission of hybrid phonons. Our investigation shows that the capture rates via the hybrid phonons are matched to the rates predicted by the dielectric continuum (DC) model and the concentration of aluminium which is an important parameter for controlling the electron capture process in light emitting diodes (LED).