Radiation Tolerance of CMOS Monolithic Active Pixel Sensors with Self-Biased Pixels

TL;DR

This paper investigates the radiation tolerance of CMOS MAPS with self-biased pixels, analyzing damage mechanisms and proposing designs that enable operation after high radiation doses, suitable for particle physics detectors.

Contribution

It introduces radiation-hardened CMOS MAPS designs with self-bias pixels that maintain functionality after exposure to over 1 Mrad radiation doses.

Findings

Self-bias pixels exhibit specific ionizing radiation damage mechanisms.

Proposed sensor designs improve radiation hardness of CMOS MAPS.

Detectors can operate effectively after high-dose irradiation.

Abstract

CMOS Monolithic Active Pixel Sensors (MAPS) are proposed as a technology for various vertex detectors in nuclear and particle physics. We discuss the mechanisms of ionizing radiation damage on MAPS hosting the the dead time free, so-called self bias pixel. Moreover, we discuss radiation hardened sensor designs which allow operating detectors after exposing them to irradiation doses above 1 Mrad