Anomalous quantum Hall effect in epitaxial graphene

TL;DR

This paper demonstrates the observation of the anomalous quantum Hall effect in epitaxial graphene monolayers grown on silicon carbide, showing their robustness and potential for electronic applications.

Contribution

It reports the first observation of the anomalous quantum Hall effect in epitaxial graphene monolayers, highlighting their resilience to processing and environmental factors.

Findings

Quantum Hall effect observed in epitaxial graphene monolayers.

Transport properties are robust against temperature, contamination, and substrate imperfections.

Mobility of the epitaxial graphene monolayer is 19,000 cm^2/Vs.

Abstract

The observation of the anomalous quantum Hall effect in exfoliated graphene flakes triggered an explosion of interest in graphene. It was however not observed in high quality epitaxial graphene multilayers grown on silicon carbide substrates. The quantum Hall effect is shown on epitaxial graphene monolayers that were deliberately grown over substrate steps and subjected to harsh processing procedures, demonstrating the robustness of the epitaxial graphene monolayers and the immunity of their transport properties to temperature, contamination and substrate imperfections. The mobility of the monolayer C-face sample is 19,000 cm^2/Vs. This is an important step towards the realization of epitaxial graphene based electronics.