Enhanced Light Emission from Erbium Doped Silicon Nitride in Plasmonic Metal-Insulator-Metal Structures

TL;DR

This study demonstrates enhanced light emission from erbium-doped silicon nitride integrated with plasmonic metal-insulator-metal structures, achieving up to 12-fold emission enhancement on resonance, with detailed analysis of polarization and coupled mode behaviors.

Contribution

It introduces a fabrication method for integrating erbium-doped silicon nitride with plasmonic MIM structures and analyzes their optical enhancement and mode interactions.

Findings

Up to 12 times emission enhancement on resonance.

Broad off-resonant emission enhancement observed.

Polarization and coupled mode behaviors match plasmonic resonances.

Abstract

Plasmonic gratings and nano-particle arrays in a metal-insulator-metal structures are fabricated on an erbium doped silicon nitride layer. This material system enables simple fabrication of the structure, since the active nitride layer can be directly grown on metal. Enhancement of collected emission of up to 12 is observed on resonance, while broad off-resonant enhancement is also present. The output polarization behavior of the gratings and nano-particle arrays is investigated and matched to plasmonic resonances, and the behavior of coupled modes as a function of inter-particle distance is also discussed.