Charge transport in graphene with resonant scatterers

TL;DR

This paper investigates how strong potential impurities affect charge transport in undoped graphene, revealing universal corrections to conductance at resonant impurity strengths.

Contribution

It provides a theoretical calculation of impurity corrections to full counting statistics in graphene, highlighting universality at resonance conditions.

Findings

Impurities cause a universal correction to conductance of 16e^2/(pi^2 h).

The correction to the cumulant generating function is derived in the s-wave approximation.

Resonant impurity strength leads to universal transport behavior.

Abstract

The full counting statistics for the charge transport through an undoped graphene sheet in the presence of strong potential impurities is studied. Treating the scattering off the impurity in the s-wave approximation, we calculate the impurity correction to the cumulant generating function. This correction is universal provided the impurity strength is tuned to a resonant value. In particular, the conductance of the sample acquires a correction of 16e^2/(pi^2 h) per resonant impurity.