Oscillatory crossover from two dimensional to three dimensional topological insulators
Chao-Xing Liu, HaiJun Zhang, Binghai Yan, Xiao-Liang Qi, Thomas, Frauenheim, Xi Dai, Zhong Fang, Shou-Cheng Zhang

TL;DR
This paper explores how reducing the thickness of 3D topological insulators like Bi2Te3 and Bi2Se3 causes an oscillatory transition to 2D topological insulators with quantum spin Hall effect, revealing a layered topological phase crossover.
Contribution
It introduces an analytical and computational study of the oscillatory crossover from 3D to 2D topological insulators as a function of layer thickness.
Findings
Crossover occurs in an oscillatory manner with layer thickness.
Alternates between topologically trivial and non-trivial phases.
Uses both analytical models and first-principles calculations.
Abstract
We investigate the crossover regime from three dimensional topological insulators and to two dimensional topological insulators with quantum spin Hall effect when the layer thickness is reduced. Using both analytical models and first-principles calculations, we find that the crossover occurs in an oscillatory fashion as a function of the layer thickness, alternating between topologically trivial and non-trivial two dimensional behavior.
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