Spin-Dependent Recombination between Phosphorus Donors in Silicon and Si/SiO2 Interface States Investigated with Pulsed Electrically Detected Electron Double Resonance

TL;DR

This study explores the spin-dependent recombination process between phosphorus donors and interface states in silicon using pulsed electrically detected magnetic resonance, revealing detailed spin interactions for quantum applications.

Contribution

It introduces a multi-frequency pump-probe method to selectively manipulate and detect spin states involved in recombination in phosphorus-doped silicon.

Findings

Recombination occurs mainly between phosphorus donors and Si/SiO2 interface states.

The method enables coherent control of spin states involved in recombination.

Selective addressing of spin subsystems is demonstrated.

Abstract

We investigate the spin species relevant for the spin-dependent recombination used for the electrical readout of coherent spin manipulation in phosphorus-doped silicon. Via a multi-frequency pump-probe experiment in pulsed electrically detected magnetic resonance, we demonstrate that the dominant spin-dependent recombination transition occurs between phosphorus donors and Si/SiO2 interface states. Combining pulses at different microwave frequencies allows us to selectively address the two spin subsystems participating in the recombination process and to coherently manipulate and detect the relative spin orientation of the two recombination partners.