Low-noise top-gate graphene transistors

TL;DR

This paper presents an experimental study of low-frequency noise in top-gate graphene transistors, demonstrating low flicker noise levels and strategies for noise reduction, which are crucial for electronic and sensor applications.

Contribution

The study provides new insights into noise sources in top-gate graphene transistors and proposes methods to reduce electronic noise in these devices.

Findings

Low flicker noise levels with normalized spectral density near 1/f

Hooge parameter below 2 x 10^-3

Noise reduction strategies based on gate bias analysis

Abstract

We report results of experimental investigation of the low-frequency noise in the top-gate graphene transistors. The back-gate graphene devices were modified via addition of the top gate separated by 20 nm of HfO2 from the single-layer graphene channels. The measurements revealed low flicker noise levels with the normalized noise spectral density close to 1/f (f is the frequency) and Hooge parameter below 2 x 10^-3. The analysis of the noise spectral density dependence on the top and bottom gate biases helped us to elucidate the noise sources in these devices and develop a strategy for the electronic noise reduction. The obtained results are important for all proposed graphene applications in electronics and sensors.