Unipolar Resistance Switching in Amorphous High-k dielectrics Based on Correlated Barrier Hopping Theory

TL;DR

This paper introduces a nonvolatile resistive memory based on amorphous LaLuO3, utilizing correlated barrier hopping theory to explain unipolar switching, with nanoscale vacancy migration enabling ultrafast programming and predictable operation voltages.

Contribution

It presents a novel resistive switching mechanism in amorphous LaLuO3 based on correlated barrier hopping theory, with insights into vacancy migration and practical operation voltage control.

Findings

Ultrafast switching speed of 6 ns achieved.

Nanoscale vacancy migration distances demonstrated.

Operation voltages made predictable for practical use.

Abstract

We have proposed a kind of nonvolatile resistive switching memory based on amorphous LaLuO3, which has already been established as a promising candidate of high-k gate dielectric employed in transistors. Well-developed unipolar switching behaviors in amorphous LaLuO3 make it suited for not only logic but memory applications using the conventional semiconductor or the emerging nano/CMOS architectures. The conduction transition between high- and low- resistance states is attributed to the change in the separation between oxygen vacancy sites in the light of the correlated barrier hopping theory. The mean migration distances of vacancies responsible for the resistive switching are demonstrated in nanoscale, which could account for the ultrafast programming speed of 6 ns. The origin of the distributions in switching parameters in oxides can be well understood according to the switching principle. Furthermore, an approach has also been developed to make the operation voltages predictable for the practical applications of resistive memories.