Electronic structure and thermoelectric properties of CuRh(1-x)MgxO2

TL;DR

This study investigates the electronic structure and thermoelectric properties of CuRh(1-x)MgxO2, revealing how Mg doping affects its electronic behavior and thermoelectric efficiency through calculations and experimental measurements.

Contribution

It provides new insights into the electronic structure and thermoelectric properties of Mg-doped CuRhO2, combining theoretical calculations with experimental data.

Findings

Mg doping up to 12% is achievable in CuRhO2.

Doped samples exhibit Fermi liquid-like behavior up to 1000K.

Large, weakly temperature-dependent power factor observed.

Abstract

Electronic structure calculations using the augmented spherical wave method have been performed for CuRhO2. For this semiconductor crystallizing in the delafossite structure, it is found that the valence band maximum is mainly due to the 4d t2g orbitals of Rh^{3+}. The structural characterizations of CuRh(1-x)MgxO2 show a broad range of Mg^{2+} substitution for Rh^{3+} in this series, up to about 12%. Measurements of the resistivity and thermopower of the doped systems show a Fermi liquid-like behavior for temperatures up to about 1000K, resulting in a large weakly temperature dependent power factor. The thermopower is discussed both within the Boltzmann equation approach as based on the electronic structure calculations and the temperature independent correlation functions ratio approximation as based on the Kubo formalism.