Effects of reabsorption and spatial trap distributions on the radiative quantum efficiencies of ZnO

TL;DR

This study investigates how reabsorption and trap distributions affect the radiative quantum efficiencies of ZnO, revealing surface recombination as a key limiting factor and suggesting defect engineering for efficiency improvements.

Contribution

It provides new insights into the roles of reabsorption and trap distributions in ZnO's quantum efficiency, supported by ultrafast spectroscopy and a rate equation model.

Findings

Surface recombination limits quantum efficiency due to high surface trap density.

Annealing reduces bulk traps but increases green-emitting surface defects.

Defect engineering can enhance the efficiency of ZnO-based white light phosphors.

Abstract

Ultrafast time-resolved photoluminescence spectroscopy following one- and two-photon excitation of ZnO powder is used to gain unprecedented insight into the surprisingly high external quantum efficiency of its "green" defect emission band. The role of exciton diffusion, the effects of reabsorption, and the spatial distributions of radiative and nonradiative traps are comparatively elucidated for the ultraviolet excitonic and "green" defect emission bands in both unannealed, nanometer-sized ZnO powders and annealed, micrometer-sized ZnO:Zn powders. We find that the primary mechanism limiting quantum efficiency is surface recombination because of the high density of nonradiative surface traps in these powders. It is found that unannealed ZnO has a high density of bulk nonradiative traps as well, but the annealing process reduces the density of these bulk traps while simultaneously creating a high density of green-emitting defects near the particle surface. The data are discussed in the context of a simple rate equation model that accounts for the quantum efficiencies of both emission bands. The results indicate how defect engineering could improve the efficiency of ultraviolet-excited ZnO:Zn-based white light phosphors.