Temperature Dependence of Magnetophonon Resistance Oscillations in GaAs/AlAs Heterostructures at High Filling Factors

TL;DR

This study investigates how temperature affects phonon-induced resistance oscillations in GaAs/AlAs heterostructures at high filling factors, revealing the role of quantum relaxation time and electron-electron interactions.

Contribution

It demonstrates the temperature dependence of magnetophonon oscillations and links their amplitude to quantum relaxation time influenced by electron-electron interactions.

Findings

Oscillation amplitude governed by quantum relaxation time.

Shift of main maximum to higher magnetic fields with temperature.

Agreement with previous ultra-high mobility system results.

Abstract

The temperature dependence of phonon-induced resistance oscillations has been investigated in two-dimensional electron system with moderate mobility at large filling factors at temperature range T = 7.4 - 25.4 K. The amplitude of phonon-induced oscillations has been found to be governed by quantum relaxation time which is determined by electron-electron interaction effects. This is in agreement with results recently obtained in ultra-high mobility two-dimensional electron system with low electron density [A. T. Hatke et al., Phys. Rev. Lett. 102, 086808 (2009)]. The shift of the main maximum of the magnetophonon resistance oscillations to higher magnetic fields with increasing temperature is observed.