Capacitance investigation of Ge nanoclusters on a silicon (001) surface grown by MBE at low temperatures

TL;DR

This study investigates the electrical properties of germanium nanoclusters on silicon surfaces grown at low temperatures, revealing correlations between quantum dot density and charge, temperature effects, and differences in defect spectra.

Contribution

It provides new insights into the electrical behavior and defect characteristics of Ge nanoclusters grown by MBE at low temperatures, linking structural and electrical properties.

Findings

Correlation between QD density and charge accumulation

Temperature-dependent hysteresis in C-V characteristics

Distinct DLTS spectra for different QD arrangements

Abstract

Electrical properties of multilayer arrays of germanium nanoclusters grown on the silicon (001) surface at low temperature have been studied. A correlation between the quantum dot (QD) density estimated from STM and the charge accumulated by QD layers as extracted from C-V characteristics was revealed. Temperature dependence of the C-V characteristics was studied. At low temperatures, the hysteresis was observed. DLTS spectra measured on the structures with different QD arrangements demonstrated essential distinctions.