Defects of Ge quantum dot arrays on the Si(001) surface

TL;DR

This study investigates the types, morphology, and density of defects in Ge quantum dot arrays on Si(001) surfaces, which are crucial for the performance of related electronic and optical devices.

Contribution

It provides a preliminary classification and morphological analysis of defects in Ge quantum dot arrays formed at moderate temperatures on Si(001).

Findings

Defects are classified into different types.

Morphological features of defects are characterized.

Surface defect densities are quantified.

Abstract

Defects of Ge quantum dot arrays may affect the electrophysical, photoelectrical or optical properties of Ge/Si heterostructures as well as the functionality of devices produced on their basis. The defects of Ge quantum dot arrays formed at moderate temperatures on the Si(001) surface have been investigated by the ultra high vacuum scanning tunnelling microscope integrated with the molecular beam epitaxy chamber. A preliminary classification of the defects has been carried out. Morphological peculiarities of the defects have been studied. The surface densities of defects of different types have been determined.