Weak localization and electron-electron interactions in Indium-doped ZnO nanowires

TL;DR

This study investigates the quantum corrections to conductivity in indium-doped ZnO nanowires, demonstrating weak localization and electron-electron interactions consistent with a quasi-one-dimensional metallic system at low temperatures.

Contribution

It provides experimental validation of quantum correction theories in doped ZnO nanowires, highlighting anisotropic magneto-conductivity and ruling out surface conductivity models.

Findings

Quantum corrections are consistent with weak localization and electron-electron interactions.

Magneto-conductivity anisotropy matches theoretical predictions.

Quantum corrections have temperature dependences of T^-1/3 and T^-1/2.

Abstract

Single crystal ZnO nanowires doped with indium are synthesized via the laser-assisted chemical vapor deposition method. The conductivity of the nanowires is measured at low temperatures in magnetic fields both perpendicular and parallel to the wire axes. A quantitative fit of our data is obtained, consistent with the theory of a quasi-one-dimensional metallic system with quantum corrections due to weak localization and electron-electron interactions. The anisotropy of the magneto-conductivity agrees with theory. The two quantum corrections are of approximately equal magnitude with respective temperature dependences of T^-1/3 and T^-1/2. The alternative model of quasi-two-dimensional surface conductivity is excluded by the absence of oscillations in the magneto-conductivity in parallel magnetic fields.