Epitaxial Graphene Growth on SiC Wafers

TL;DR

This paper demonstrates a method for growing high-quality epitaxial graphene on SiC wafers using thermal desorption in a CVD reactor, and explores its properties and application in high-frequency transistors.

Contribution

It introduces a novel in vacuo thermal desorption process for epitaxial graphene growth on SiC wafers and assesses its electrical and morphological characteristics.

Findings

Raman spectra indicate predominantly monolayer graphene.

EG on 50 mm wafers enabled fabrication of FETs with fmax of 14 GHz.

Growth conditions correlate with graphene morphology and electrical properties.

Abstract

An in vacuo thermal desorption process has been accomplished to form epitaxial graphene (EG) on 4H- and 6H-SiC substrates using a commercial chemical vapor deposition reactor. Correlation of growth conditions and the morphology and electrical properties of EG are described. Raman spectra of EG on Si-face samples were dominated by monolayer thickness. This approach was used to grow EG on 50 mm SiC wafers that were subsequently fabricated into field effect transistors with fmax of 14 GHz.