Statistical equilibrium of silicon in the atmospheres of metal-poor stars
J.R. Shi, T. Gehren, L. Mashonkina, and G. Zhao

TL;DR
This study investigates the statistical equilibrium of silicon in metal-poor star atmospheres, emphasizing non-LTE effects and their impact on silicon abundance determinations using high-resolution spectra.
Contribution
It provides detailed NLTE calculations for silicon in metal-poor stars, incorporating recent atomic data and radiation effects, improving abundance accuracy.
Findings
NLTE effects significantly affect silicon abundance estimates.
High ultraviolet radiation influences silicon ionization in metal-poor stars.
NLTE corrections can reach approximately 0.2 dex for warm metal-poor stars.
Abstract
Aims. The statistical equilibrium of neutral and ionized silicon in the atmospheres of metal-poor stars is discussed. Non-local thermodynamic equilibrium effects are investigated and the silicon abundances in metal-poor stars determined. Methods. We have used high resolution, high signal to noise ratio spectra from the UVES spectragraph at the ESO VLT telescope. Line formation calculations of Si i and Si ii in the atmospheres of metal-poor stars are presented for atomic models of silicon including 174 terms and 1132 line transitions. Recent improved calculations of Si i and Si ii photoionization cross-sections are taken into account, and the influence of the free-free quasi-molecular absorption in the Ly alpha wing is investigated by comparing theoretical and observed fluxes of metal-poor stars. All abundance results are derived from LTE and NLTE statistical equilibrium calculations and…
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