Two gate-voltage periods in a metallic-nanoparticle based single-electron transistor

TL;DR

This paper reports the discovery of two distinct gate voltage periods in the conductance of a metallic nanoparticle single-electron transistor, revealing complex coupling effects not previously observed.

Contribution

It introduces a novel technique to explore the electric properties of metallic nanoparticles with variable coupling to leads, uncovering two gate voltage periods.

Findings

Conductance shows two gate voltage periods.

Relative strength of periods depends on coupling and source-drain voltage.

Findings may be general for strongly coupled metallic nanoparticles.

Abstract

Systems of quantum dots (QD) connected to leads exhibit periodic conductance peaks as a function of gate voltage arising from the Coulomb blockade effect \cite{review1,review2,review3}. Much effort goes into minimizing the size of QDs and reaching the scale of single molecules \cite{molecular1,molecular2,molecular3} which could serve as nanoelectronic circuit components such as transistors. Connecting molecules or nanoparticles to external leads cannot be achieved by the traditional methods used in semiconductor based QDs, hence, controlling the coupling to nanoparticle QDs is a major technical challenge. Here we present a novel technique by which we can explore electric properties of a metallic nanoparticle while varying the coupling to leads. We find that the conductance through the nanoparticle is characterized by \emph{two} gate voltage periods. The relative strength of the periods depends both on the dot-lead coupling and on the source-drain voltage. These surprising findings may be a general property of strongly coupled metallic nanoparticles.