Monolayer honeycomb structures of group IV elements and III-V binary compounds
Hasan Sahin, S.Cahangirov, M.Topsakal, E.Bekaroglu, E.Aktrk, R.T., Senger, S. Ciraci

TL;DR
This study uses first-principles calculations to explore the stability, electronic properties, and elastic constants of 2D honeycomb structures of group IV and III-V elements, revealing stable configurations and their potential as semiconductors or semimetals.
Contribution
It provides a comprehensive computational analysis of 22 stable 2D honeycomb materials, including structural, electronic, and elastic properties, expanding the understanding of 2D materials beyond graphene.
Findings
22 stable honeycomb materials identified.
Si and Ge are semimetallic with linear band crossing.
Binary compounds are semiconductors with variable band gaps.
Abstract
Using first-principles plane wave calculations, we investigate two dimensional honeycomb structure of Group IV elements and their binary compounds, as well as the compounds of Group III-V elements. Based on structure optimization and phonon mode calculations, we determine that 22 different honeycomb materials are stable and correspond to local minima on the Born-Oppenheimer surface. We also find that all the binary compounds containing one of the first row elements, B, C or N have planar stable structures. On the other hand, in the honeycomb structures of Si, Ge and other binary compounds the alternating atoms of hexagons are buckled, since the stability is maintained by puckering. For those honeycomb materials which were found stable, we calculated optimized structures, cohesive energies, phonon modes, electronic band structures, effective cation and anion charges, and some elastic…
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