Spin Currents in Semiconductor Nanostructures: A Nonequilibrium Green-Function Approach

TL;DR

This chapter reviews the nonequilibrium Green function approach to modeling spin currents in semiconductor nanostructures with spin-orbit couplings, providing practical computational methods and insights into recent experimental observations and device applications.

Contribution

It offers a comprehensive tutorial on NEGF techniques for spin transport in SO-coupled nanostructures, including computational recipes and analysis of experimental phenomena.

Findings

NEGF method effectively models spin and charge currents in nanostructures.

The approach captures ballistic and diffusive transport regimes with phase coherence.

Algorithms enable simulation of devices at the scale of spin precession length.

Abstract

This chapter of "The Oxford Handbook of Nanoscience and Technology: Frontiers and Advances" reviews nonequilibrium Green function (NEGF) approach to modeling spin current generation, transport, and detection in semiconductor nanostructures containing different types of spin-orbit (SO) couplings. Its tutorial style--with examples drawn from the field of the spin Hall effects (SHEs) and with treatment of the Rashba, Dresselhaus and extrinsic SO couplings--offers practical recipes to compute total spin and charge currents flowing out of the device, as well as the nonequilibrium local spin densities and spin fluxes within the multiterminal nanostructure. These quantities, which are obtained from the knowledge of spin-resolved NEGFs that can describe both ballistic and diffusive transport regimes while handling phase-coherent effects or dephasing mechanisms relevant at room temperature, can be employed to understand recent experiments on all-electrical detection of mesoscopic and quantum SHE in complicated low-dimensional nanostructures, as well as to model a multitude of "second generation" spintronic devices exploiting coherent spin dynamics. The chapter also provides extensive coverage of relevant technical and computational details, such as: (i) the construction of retarded and lesser Green functions for SO-coupled nanostructures attached to many electrodes; (ii) computation of self-energies introduced by different types of electrodes attached to the central region; and (iii) accelerated algorithms for NEGF evaluation that make possible spin transport modeling in devices of the size comparable to the spin precession length (typically few hundreds of nanometers) that sets the scale where mesoscopic SHE effect in ballistic SO-coupled nanostructures is expected to reach its optimal magnitude.