Magnetoresistive junctions based on epitaxial graphene and hexagonal boron nitride

TL;DR

This paper introduces a novel type of magnetoresistive junctions using monolayer epitaxial graphene and hexagonal boron nitride as ultra-thin covalent spacers, demonstrating promising spin transport properties for nanoscale spintronics.

Contribution

It presents a first-principles study of structurally well-defined graphene/h-BN-based magnetoresistive junctions with tunable properties for advanced spintronic devices.

Findings

Low resistance area products observed.

Strong exchange coupling across interfaces.

Magnetoresistance ratios exceeding 100%.

Abstract

We propose monolayer epitaxial graphene and hexagonal boron nitride (h-BN) as ultimate thickness covalent spacers for magnetoresistive junctions. Using a first-principles approach, we investigate the structural, magnetic and spin transport properties of such junctions based on structurally well defined interfaces with (111) fcc or (0001) hcp ferromagnetic transition metals. We find low resistance area products, strong exchange couplings across the interface, and magnetoresistance ratios exceeding 100% for certain chemical compositions. These properties can be fine tuned, making the proposed junctions attractive for nanoscale spintronics applications.