# Memristive switching of MgO based magnetic tunnel junctions

## TL;DR

This paper demonstrates simultaneous tunnel magneto resistance and resistive switching in MgO-based magnetic tunnel junctions, revealing multi-bit storage potential and insights into the switching mechanism.

## Contribution

It introduces the observation of combined TMR and RS in MgO magnetic tunnel junctions and explores the switching mechanism through different barrier preparations.

## Key findings

- Bipolar resistive switching of 6% observed
- TMR ratios of about 100% achieved
- Multiple resistive states enable multi-bit storage

## Abstract

Here we demonstrate that both, tunnel magneto resistance (TMR) and resistive switching (RS), can be observed simultaneously in nano-scale magnetic tunnel junctions. The devices show bipolar RS of 6 % and TMR ratios of about 100 %. For each magnetic state, multiple resistive sates are created depending on the bias history which provides a method for multi-bit data storage and logic. The electronic transport measurements are discussed in the framework of a memristive system. Differently prepared MgO barriers are compared to gain insight into the switching mechanism.