Memristive switching of MgO based magnetic tunnel junctions

TL;DR

This paper demonstrates simultaneous tunnel magneto resistance and resistive switching in MgO-based magnetic tunnel junctions, revealing multi-bit storage potential and insights into the switching mechanism.

Contribution

It introduces the observation of combined TMR and RS in MgO magnetic tunnel junctions and explores the switching mechanism through different barrier preparations.

Findings

Bipolar resistive switching of 6% observed

TMR ratios of about 100% achieved

Multiple resistive states enable multi-bit storage

Abstract

Here we demonstrate that both, tunnel magneto resistance (TMR) and resistive switching (RS), can be observed simultaneously in nano-scale magnetic tunnel junctions. The devices show bipolar RS of 6 % and TMR ratios of about 100 %. For each magnetic state, multiple resistive sates are created depending on the bias history which provides a method for multi-bit data storage and logic. The electronic transport measurements are discussed in the framework of a memristive system. Differently prepared MgO barriers are compared to gain insight into the switching mechanism.