Detection of charge motion in a non-metallic silicon isolated double quantum dot

TL;DR

This paper investigates how electron motion in a non-metallic, silicon-based double quantum dot can be detected capacitively, revealing large Coulomb shifts and charge rearrangements despite the absence of direct charge transfer.

Contribution

It demonstrates effective detection of electron motion in an isolated silicon quantum dot system using a single electron transistor, highlighting inelastic cotunneling effects.

Findings

Large Coulomb peak shifts observed

Detection achieved without direct charge transfer

Charge rearrangement and inelastic cotunneling explained

Abstract

As semiconductor device dimensions are reduced to the nanometer scale, effects of high defect density surfaces on the transport properties become important to the extent that the metallic character that prevails in large and highly doped structures is lost and the use of quantum dots for charge sensing becomes complex. Here we have investigated the mechanism behind the detection of electron motion inside an electrically isolated double quantum dot that is capacitively coupled to a single electron transistor, both fabricated from highly phosphorous doped silicon wafers. Despite, the absence of a direct charge transfer between the detector and the double dot structure, an efficient detection is obtained. In particular, unusually large Coulomb peak shifts in gate voltage are observed. Results are explained in terms of charge rearrangement and the presence of inelastic cotunneling via states at the periphery of the single electron transistor dot.