XOR logic gate on electron spin qubits in quadruple coupled quantum dots
A. Kwasniowski, J. Adamowski

TL;DR
This paper demonstrates the realization of an XOR logic gate using electron spin qubits in quadruple quantum dots, controlled electrically and read via spin-to-charge conversion, with optimized device parameters.
Contribution
It introduces a method to implement XOR logic gates in quadruple quantum dots using all-electrical control and identifies optimal device parameters for performance.
Findings
XOR gate can be realized in quadruple quantum dots.
All-electrical control enables gate operation.
Optimal device parameters enhance performance.
Abstract
The spin-dependent localization of electrons in quadruple quantum dots (QD's) has been studied by the configuration interaction method. We have investigated two nanodevices that consist of laterally coupled quadruple QD's. We have shown that -- in both the nanodevices with suitably chosen parameters -- the exclusive OR (XOR) logic gate can be realized by all-electrical control with the readout of output via the spin-to-charge conversion. We have determined the nanodevice parameters that are optimal for the performance of the XOR logic gate.
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Taxonomy
TopicsQuantum and electron transport phenomena · Advancements in Semiconductor Devices and Circuit Design · Semiconductor materials and devices
