Band-like transport and trapping in TMTSF Single Crystal Transistors

TL;DR

This study combines experimental measurements and theoretical modeling to understand charge transport and trapping in TMTSF single-crystal transistors, revealing the role of shallow and deep traps in device behavior.

Contribution

It introduces a simple model that accurately reproduces device characteristics and enables extraction of trap densities and energies in TMTSF transistors.

Findings

Shallow traps are caused by electrostatic potential fluctuations.

The model successfully fits temperature and carrier density dependence.

Deep traps influence the intrinsic transport properties.

Abstract

We perform a combined experimental and theoretical study of tetramethyltetraselenafulvalene (TMTSF) single-crystal field-effect transistors, whose electrical characteristics exhibit clear signatures of the intrinsic transport properties of the material. We introduce a simple, well-defined model based on physical parameters and we successfully reproduce quantitatively the device properties as a function of temperature and carrier density. The analysis allows its internal consistency to be checked, and enables the reliable extraction of the density and characteristic energy of shallow and deep traps in the material. Our findings indicate that shallow traps originate from electrostatic potential fluctuations generated by charges fixed in the deep traps.