Electrically detected magnetic resonance using radio-frequency reflectometry

TL;DR

This paper introduces a radio-frequency reflectometry technique for electrically detected magnetic resonance, significantly enhancing signal-to-noise ratio and bandwidth, enabling detailed observation of spin dynamics in silicon transistors at very low temperatures.

Contribution

The paper presents a novel RF reflectometry method for magnetic resonance detection, improving sensitivity and temporal resolution over traditional techniques.

Findings

25-fold increase in signal-to-noise ratio

Operational bandwidth > 300 kHz

Potential for observing spin dynamics in devices

Abstract

The authors demonstrate readout of electrically detected magnetic resonance at radio frequencies by means of an LCR tank circuit. Applied to a silicon field-effect transistor at milli-kelvin temperatures, this method shows a 25-fold increased signal-to-noise ratio of the conduction band electron spin resonance and a higher operational bandwidth of > 300 kHz compared to the kHz bandwidth of conventional readout techniques. This increase in temporal resolution provides a method for future direct observations of spin dynamics in the electrical device characteristics.