Resistive switching in nanogap systems on SiO2 substrates

TL;DR

This paper demonstrates voltage-controlled resistive switching in nanoscale gap systems on SiO2 substrates, highlighting the intrinsic nature of switching due to SiO2 breakdown and showcasing promising memory performance metrics.

Contribution

It reveals that resistive switching in nanosystems on SiO2 is primarily due to substrate breakdown, emphasizing caution in interpreting switching mechanisms.

Findings

Switching occurs across various materials and gap sizes.

High ON/OFF ratio of 10^5 achieved.

Fast switching time of 2 microseconds demonstrated.

Abstract

Voltage-controlled resistive switching is demonstrated in various gap systems on SiO2 substrate. The nanosized gaps are made by different means using different materials including metal, semiconductor, and metallic nonmetal. The switching site is further reduced by using multi-walled carbon nanotubes and single-walled carbon nanotubes. The switching in all the gap systems shares the same characteristics. This independence of switching on the material compositions of the electrodes, accompanied by observable damage to the SiO2 substrate at the gap region, bespeaks the intrinsic switching from post-breakdown SiO2. It calls for caution when studying resistive switching in nanosystems on oxide substrates, since oxide breakdown extrinsic to the nanosystem can mimic resistive switching. Meanwhile, the high ON/OFF ratio (10E5), fast switching time (2 us, test limit), durable cycles demonstrated show promising memory properties. The intermediate states observed reveal the filamentary conduction nature.